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NTHD3102C
MAXIMUM RATINGS (continued) (T J = 25 ° C unless otherwise noted)
Parameter
Symbol
Value
Unit
N?Channel
Continuous Drain Current (Note 3)
P?Channel
Continuous Drain Current (Note 3)
Power Dissipation (Note 3)
Pulsed Drain Current
Steady
State
Steady
State
N?Ch
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
tp = 10 m s
I D
I D
P D
I DM
3.0
2.2
2.3
1.7
0.6
16
A
A
W
A
P?Ch
12.6
Operating Junction and Storage Temperature
Source Current (Body Diode)
Lead Temperature for Soldering Purposes (1/8 ″ from case for 10 seconds)
T J , T STG
I S
T L
?55 to 150
1.7
260
° C
A
° C
THERMAL RESISTANCE RATINGS
Parameter
Junction?to?Ambient ? Steady State (Note 2)
Junction?to?Ambient ? t ≤ 5 s (Note 2)
Junction?to?Ambient ? Steady State (Note 3)
Symbol
R q JA
Max
110
60
195
Unit
° C/W
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Parameter
Symbol
N/P
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain?to?Source Breakdown Voltage
(Note 4)
Drain?to?Source Breakdown Voltage
V (BR)DSS
V (BR)DSS /T J
N
P
N
V GS = 0 V
I D = 250 m A
I D = ?250 m A
20
?20
20.2
V
mV/ ° C
Temperature Coefficient
P
16.2
Zero Gate Voltage Drain Current
I DSS
N
P
V GS = 0 V, V DS = 16 V
V GS = 0 V, V DS = ?16 V
T J = 25 ° C
1.0
?1.0
m A
N
P
V GS = 0 V, V DS = 16 V
V GS = 0 V, V DS = ?16 V
T J = 85 ° C
5.0
?5.0
Gate?to?Source Leakage Current
I GSS
N
V DS = 0 V, V GS = ± 8.0 V
± 100
nA
P
V DS = 0 V, V GS = ± 8.0 V
± 100
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
2. Surface?mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).
3. Surface?mounted on FR4 board using the minimum recommended pad size (Cu area = TBD in sq).
4. Switching characteristics are independent of operating junction temperatures.
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